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MBD301, MMBD301LT1
Preferred Device
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
Features
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* * * *
Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 Pb-Free Packages are Available
30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
MBD301
MARKING DIAGRAM
TO-92 (TO-226AC) CASE 182 STYLE 1 MBD 301 AYWWG G
MAXIMUM RATINGS
MBD301 Rating Reverse Voltage Total Device Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ Tstg 200 2.0 -55 to +125 -55 to +150 mW mW/C C C MMBD301LT1 Value 30 Unit V
1 2
A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2 CATHODE
1 ANODE
MMBD301LT1
MARKING DIAGRAM
3 1 2
SOT-23 (TO-236) CASE 318 STYLE 8
4T M G G 1
M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) 3 CATHODE 1 ANODE
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2007
1
January, 2007 - Rev. 4
Publication Order Number: MBD301/D
MBD301, MMBD301LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 - - - - Typ - 0.9 13 0.38 0.52 Max - 1.5 200 0.45 0.6 Unit V pF nAdc Vdc Vdc
ORDERING INFORMATION
Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G Package TO-92 TO-92 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 5000 Units / Bulk 5000 Units / Bulk 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
MBD301, MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) 400 KRAKAUER METHOD 300 200 100 0
0
10
20
30 40 50 60 70 IF, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10 TA = 100C
100 IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
1.0
10 TA = 85C TA = -40C
0.1
75C
0.01
25C
1.0
TA = 25C
0.001
0
6.0
12 18 VR, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6 0.8 VF, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
IF(PEAK)
CAPACITIVE CONDUCTION
IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION
SINUSOIDAL GENERATOR
BALLAST NETWORK (PADS)
PADS DUT
SAMPLING OSCILLOSCOPE (50 W INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
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3
MBD301, MMBD301LT1
PACKAGE DIMENSIONS
TO-92 (TO-226AC) CASE 182-06 ISSUE L
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
A
B
SEATING PLANE
R D K L
XX D G H V C N
SECTION X-X
1
2
N
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4
EE EE
P
J
DIM A B C D G H J K L N P R V
INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --- 0.250 --- 0.080 0.105 --- 0.050 0.115 --- 0.135 ---
MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --- 6.35 --- 2.03 2.66 --- 1.27 2.93 --- 3.43 ---
STYLE 1: PIN 1. ANODE 2. CATHODE
MBD301, MMBD301LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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5
MBD301/D

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